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BCW65, BCW66
NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP)
3

2 1
VPS05161
Type BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H
Maximum Ratings Parameter
Marking EAs EBs ECs EFs EGs EHs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
Symbol VCEO VCBO VEBO
BCW65 32 60 5 800 1 100 200 330 150
BCW66 45 75 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW C
-65 ... 150
Thermal Resistance Junction - soldering point1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-10-2001
BCW65, BCW66
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 C VCB = 45 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 10 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 10 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 100 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H
1) Pulse test: t 300s, D = 2%
Unit max. V
typ.
V(BR)CEO BCW65 BCW66 V(BR)CBO BCW65 BCW66 V(BR)EBO ICBO BCW65 BCW66 ICBO BCW65 BCW66 IEBO hFE 35 50 80 hFE 75 110 180 hFE 100 160 250 160 250 350 250 400 630 20 20 20 20 20 60 75 5 32 45 -
nA
A
nA -
2
Jul-10-2001
BCW65, BCW66
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 170 MHz VBEsat 1.25 2 VCEsat 0.3 0.7 hFE 35 60 100 V Symbol min. Values typ. max. Unit
3
Jul-10-2001
BCW65, BCW66
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz fT 5
BCW 65/66 EHP00391
360
mW
300 270
P tot
240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120
10 2
5
C 150 TS
10 1 10 0
10 1
10 2
mA
10 3
C
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCW 65/66 EHP00392
Collector cutoff current ICBO = f (T A) VCB = V CEmax
10 5 nA
BCW 65/66 EHP00393
D=
tp T
tp T
CB0
10 4 5
10 5
2
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 3 5 10 2 5
max
typ 10 5
1
10 0 10 -6
10
-5
10
-4
10
-3
10
-2
s tp
10
0
10 0
0
50
100
C TA
150
4
Jul-10-2001
BCW65, BCW66
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 3 mA
BCW 65/66 EHP00394
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10
10 3 mA
BCW 65/66 EHP00395
C
10 2 5
150 C 25 C -50 C
C
10 2 5
150 C 25 C -50 C
10 1 5
10 1 5
10 5
0
10
0
5
10 -1
0
1
2
3
V VBE sat
4
10 -1
0
200
400
600 mV 800 VCE sat
DC current gain hFE = f (IC ) VCE = 1V
10 3 5
BCW 65/66 EHP00396
100 C 25 C
h FE
10 2 5
-50 C
10 1 5
10 0 10 -1
5 10 0
5 10 1
5 10 2
mA 10 3
C
5
Jul-10-2001

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